Fairchild Introduces 60V PowerTrench MOSFET for Low Conduction and Switching Losses

Fairchild Semiconductor developed the FDMS86500L N-Channel, PowerTrench® MOSFET. The device is designed specifically to minimize conduction loss, switch node ringing, and to improve the overall efficiency of dc-dc converters.

Through an advanced package and silicon combination, the FDMS86500L provides significantly lower RDS(ON) (2.5mΩ @ VGS = 10V, ID=25A), enabling lower conduction losses in an industry-standard 5 x 6mm Power 56 package.

Additionally, the FDMS86500L, using shielded-gate MOSFET technology, provides very low switching losses (Qgd 14.6 nC Typ.). When combined with the device’s low conduction losses, this provides designers the improved power density they need.

The FDMS86500L offers a better figure of merit (RDS(ON) QG), delivering high efficiency and lower power dissipation in order to meet efficiency standards and regulations.

Other features of the FDMS86500L include next-generation enhanced body diode technology engineered for soft recovery, MSL1 robust package design, 100% UIL tested and is RoHS compliant.

The FDMS86500L is priced at US $0.90 in 1,000 quantity pieces with a delivery of 8-10 weeks ARO.