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Hello Everyone,
I am testing an Halfbridge IGBT device at this condition 600V/200A with Rg = 0.5Ω, L=10uH.
During turn off, when the collector voltage starts to increase, I noted a large drop of current for Low side respect to what happens when I switch High side device. Please check the photo, i am sharing a zoom of the turn off
Another thing, monitoring the high side diode current, i measure the opposite effect.
I think I have some parasitic effect in my setup:
I have metal plane N-Phase-P isolated by FR4, the gate voltage is between -5V and 15V, a separate pcb rogowski probe across P and N connection for the ICE, let me know if you want some extra information.
If please, some of you already got a similar problem in their setup, could he share to me?
Thanks in advance
I am testing an Halfbridge IGBT device at this condition 600V/200A with Rg = 0.5Ω, L=10uH.
During turn off, when the collector voltage starts to increase, I noted a large drop of current for Low side respect to what happens when I switch High side device. Please check the photo, i am sharing a zoom of the turn off
Another thing, monitoring the high side diode current, i measure the opposite effect.
I think I have some parasitic effect in my setup:
I have metal plane N-Phase-P isolated by FR4, the gate voltage is between -5V and 15V, a separate pcb rogowski probe across P and N connection for the ICE, let me know if you want some extra information.
If please, some of you already got a similar problem in their setup, could he share to me?
Thanks in advance
