STMicroelectronics Inc. (ST, Geneva, Switzerland) announced its new TD350 gate driver for IGBTs and power MOSFETs, which features control and protection functions that allow the design of high-reliability systems, according to the company.
The TD350 has a 1,200 V, three-phase inverter and a motor control with a temperature range from -40 °C to +125 °C. It features a negative gate drive ability, two steps turn off with adjustable level and delay, a miller clamp, and desaturation protection. The device's input is compatible with optocouplers or pulse transformers.
It is triggered by the signal edge and allows the use of low-sized, low-cost pulse transformers. The output stage is able to sink/source 1.5 A (0.75 A minimum over full temperature range). Separated sink and source outputs allow independent gate charge and discharge control without an external diode. The TD350 has under-voltage detection that protects the application in the event of a low VH supply voltage.