Nitronex Announces 48V GAN on Silicon Platform Targeting Next Generation Wireless Infrastructure Applications
Nitronex Corp. has developed a high voltage platform to support next generation wireless infrastructure applications. Leveraging the company's existing qualified NRF1 (GaN on Silicon) technology, the new platform will take advantage of thermal enhancements in wafer processing, transistor design and packaging to support 48V operation under all waveforms and extreme flange temperatures.
"Designed to support high-power broadband operations, the high-voltage, thermally enhanced platform enables software reconfigurable radios by giving RF power amplifier designers a power and bandwidth combination not available with other production technologies," said Chris Rauh, Nitronex VP Sales and Marketing. "Supporting supply voltages of 48V allows devices to operate with reduced memory effects, wider RF output bandwidth and easier matching. In a new RF power amplifier design, this translates into improved system efficiency and reduced number of product variants, resulting in reduced acquisition and operating costs. For existing designs, we see this product line helping to extend the service life of existing systems by improving efficiency and bandwidth in the current footprint of fielded assets."
The initial products planned will be designed for WiMAX and 3G/3G LTE waveforms operating in frequency bands of 1.8 to 2.2GHz and 2.3 to 2.7GHz. Line-ups with output power ranging from 5 to 200W will be supported. Target specifications will be available in late January with initial samples expected in March of 2007 and full production qualification to be completed in the third quarter of 2007.
