Mitsubishi Electric Announces Sale Of 7.2V High Power MOSFET For Commercial Radios

Mitsubishi Electric Corp. announced that it will begin sample shipments of a 7.2V high-power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for power amplifiers in commercial radios on December 8, 2008. The MOSFET has an industry top-level drain efficiency^ 1 of 67 percent at 527MHz, as well as a wide operation range of 450-527MHz – said to be an industry first.

By optimizing the MOSFET structure, Mitsubishi Electric claims that it has achieved the industry top-level drain efficiency of 67% at 527MHz, which is higher than the 50%-efficiency of the company’s previous model, the RD07MVS1. In addition, the 50% drain efficiency in Mitsubishi Electric’s previous model did not cover frequency bands outside 527MHz, but the new RD07MUS2B is said to guarantee a drain efficiency of 58% and higher at a wide frequency band of 450-527MHz – said to be an industry first. The company claims that this will contribute to the production of multi-channel radios, and longer lasting radio batteries.

The company claims that the built-in gate protection diode helped achieve an industry top-level surge tolerance of 5kV and higher for gate sources, and 3kV and higher for drain sources. This improvement is said to make anti-electrostatic measures simple.