EPC Introduces Development Board for Fast Development of Power Conversion Circuits and Systems Using eGaN FETs

Efficient Power Conversion Corp. (EPC) announced the introduction of the EPC9003 development board to make it easier for users to start designing with EPC’s 200V enhancement-mode gallium nitride (eGaN)® field effect transistor (FET) in applications such as solar microinverters, class D audio amplifiers, Power over Ethernet (PoE), and synchronous rectification.

The EPC9003 development board is a 200V maximum input voltage, 5A maximum output current, half bridge with on board gate drives, featuring the EPC2010 200V eGaN FET. The purpose of this development board is to simplify the evaluation process of the EPC2010 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9003 development board is 2 x 1.5" and contains not only two EPC2010 GaN FETs in a half bridge configuration with gate drivers, but also an on board gate drive supply and bypass capacitors. There are also various probe points to facilitate simple waveform measurement and efficiency calculation. A Quick Start Guide is included with the EPC9003 development board for reference and ease of use.

EPC9003 development boards are priced at $95.00 each.