New Industry Products

Diodes Inc. Packages MOSFETs for Cooler Operation

December 01, 2011 by Jeff Shepard

Diodes Inc. announced the introduction of its first MOSFETs to be housed in the miniature DFN1212-3 package. With a junction to ambient thermal resistance (Rthj-a) of 130°C/W, the package supports a power dissipation of up to 1W under continuous conditions, ensuring significantly cooler operation than that achievable with existing footprint-compatible SOT723 alternatives characterized by an Rthj-a performance of 280°C/W.

Occupying the exact same 1.44mm2 printed circuit board area and with the same low profile 0.5mm off-board height as the less thermally efficient SOT723 packaged MOSFETs, these leadless DFN1212-3 packaged alternatives are drop-in replacements for high reliability signal and load-switching applications in a broad range of high portability consumer electronics products including digital cameras, tablet PCs and smartphones.

The MOSFET pair initially released by Diodes Inc. are 20V rated and comprise the DMN2300UFD N-channel and the DMP21D0UFD P-channel parts. Helping to dramatically reduce conduction losses and power dissipation, the N-channel MOSFET presents a typical RDS(ON) of just 400mΩ at VGS of 1.8V, which is approximately 50% lower than the most popular SOT723 packaged alternatives.

The DMN2300UFD N-channel MOSFET is priced at $0.1USD in 10k quantities and the DMP21D0UFD P-channel MOSFET at $0.11USD in 10k quantities. 30V and 60V rated parts will follow in the DFN1212-3 package, along with a comprehensive range of bipolar devices.