Reliability and Qualification of CoolGaN™
Infineon's CoolGaN gallium nitride on silicon HEMTs represent a dramatic improvement in power conversion switching device figure of merit with outstanding system performance enabling higher efficiency, power density and reduced system cost. But, as with any new technology, it is of critical importance that a thorough technology development and product qualification procedure is followed in order to assure reliable operation that meets design lifetime and quality requirements in power conversion systems.
This paper describes the comprehensive four-part process that Infineon has used to successfully qualify CoolGaN 600V technology and products. Key failure mechanisms are described, and the means to ensure safe and reliable operation in a wide variety of applications are provided.