Industry Article

Benefits of GaN e-mode HEMTs in wireless power transfer

July 29, 2019 by Infineon Technologies

GaN power devices in resonant class D and class E radio frequency power amplifiers

Wireless charging for portable devices dispenses with the need for conventional adapters/chargers with their associated cables and connectors. Although the technology has existed for some time and some smartphones support wireless charging for a while, only recently have tablets and notebooks had this capability. It is expected to become widely adopted within the next few years for other applications as well.

The following paper demonstrates the advantages of gallium nitride (GaN) enhancement mode (e-mode) HEMT devices over MOSFETs in two power amplifier topologies that have been proposed for wireless power transfer according to the baseline specification of the AirFuel Alliance.

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