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SiC Technology on Track to Power Formula E Racing Cars

SiC Technology on Track to Power Formula E Racing Cars

Journalists from all over Europe joined ROHM Semiconductor to enjoy the Formula E Race in Monaco this year. An eventful weekend with interesting…


IEEE Energy Conversion Congress and Expo 2018

IEEE Energy Conversion Congress and Expo 2018

Energy Conversion Congress and Expo (ECCE)—the foremost IEEE conference in the field of electrical and electromechanical energy…


tech insights Dec 05, 2018 by Gary Dolny
Interview Littelfuse Discusses Acquisition of IXYS Future of SiC and NonSiC Components

Interview Littelfuse Discusses Acquisition of IXYS Future of SiC and NonSiC Components

This article presents the discussions from an interview of Littelfuse on its acquisition of IXYS.


tech insights Jul 06, 2018 by Littelfuse
Interview ROHM Focuses on SiC Plus for Automotive and Industrial Markets

Interview ROHM Focuses on SiC Plus for Automotive and Industrial Markets

Bodo´s Power Systems recently interviewed Christian André, Heiko Metzger, Dr. Andreas Bauknecht, and Aly Mashaly, the management of ROHM Europe…


Interview: Navitas on Design Simplicity - GaN Power ICs with iDrive

Interview: Navitas on Design Simplicity - GaN Power ICs with iDrive

This article talks about the interview with Gene Sheridan from Navitas Semiconductors on GaN Technology.


SiC - the High Performance Power Semiconductor

SiC - the High Performance Power Semiconductor

This article discusses the Silicon Carbide Technology with Chris Dries from USCi.


Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

The past few years have been notable for the increased rate of investment in developing alternative semiconductor materials such as silicon carbide…


Looking Back and Forward on 10 Years with GaN Systems

Looking Back and Forward on 10 Years with GaN Systems

Back in the dark days after the internet bubble burst, Nortel had demised, and high tech in Canada’s Silicon Valley North was in the doldrums.…


Wide Bandgap Now

Wide Bandgap Now

Five years ago, in this column, I wrote an editorial entitled, “When Wide Bandgap?”  In that piece, I predicted, “The key to success in silicon


tech insights Oct 03, 2016 by Dan Kinzer
Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.”  While silicon carbide devices


tech insights Jun 06, 2016 by Greg Evans
Is Only Full SiC the “Real“ SiC?

Is Only Full SiC the “Real“ SiC?

Whenever we talk about Silicon Carbide and its applications, our thoughts jump to Silicon Carbide MOSFET power modules, the so called “Full…


Six for SiC – or is it too soon?

Six for SiC – or is it too soon?

This article discusses the best time to switch from 4 to 6-inch wafers for the fabrication of Silicon Carbide (SiC) power semiconductor devices.


Around the World in 80 Days with GaN Systems

Around the World in 80 Days with GaN Systems

Phileas Fogg, in the classic Jules Verne tale “Around the World in 80 Days”, has an argument in a London club over an 1872 newspaper article which


tech insights Oct 02, 2015 by Jim Witham
6th ECPE SiC amp GaN User Forum in Warwick 2021 April 2015

6th ECPE SiC amp GaN User Forum in Warwick 2021 April 2015

Overview ECPE wide bandgap user forums have established as an international event where users - i.e., engineers developing advanced power…