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SiC - the High Performance Power Semiconductor

SiC - the High Performance Power Semiconductor

This article discusses the Silicon Carbide Technology with Chris Dries from USCi.


Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

The past few years have been notable for the increased rate of investment in developing alternative semiconductor materials such as silicon carbide…


Wide Bandgap Now

Wide Bandgap Now

Five years ago, in this column, I wrote an editorial entitled, “When Wide Bandgap?”  In that piece, I predicted, “The key to success in silicon


tech insights Oct 03, 2016 by Dan Kinzer
Is Only Full SiC the “Real“ SiC?

Is Only Full SiC the “Real“ SiC?

Whenever we talk about Silicon Carbide and its applications, our thoughts jump to Silicon Carbide MOSFET power modules, the so called “Full…


Six for SiC – or is it too soon?

Six for SiC – or is it too soon?

This article discusses the best time to switch from 4 to 6-inch wafers for the fabrication of Silicon Carbide (SiC) power semiconductor devices.


6th ECPE SiC amp GaN User Forum in Warwick 2021 April 2015

6th ECPE SiC amp GaN User Forum in Warwick 2021 April 2015

Overview ECPE wide bandgap user forums have established as an international event where users - i.e., engineers developing advanced power…