NEC Electronics America Intros NP Series Power MOSFETs
NEC Electronics America Inc. (Japan) introduced its new NP Series of power MOSFETs, the newest member of its line of power management devices. The NP Series features a combination of trench technologies and packaging solutions that result in low leakage current, and enable a low on-state resistance Rds(on) of 1.4 mΩ (typical). The NP Series provides power management in high-frequency power supplies and motor control systems in automotive, motor control, office, robotic, and uninterruptable power applications.
By combining its UMOS-4 process technology with a trench configuration, NEC Electronics has increased the MOSFET's cell density, resulting in decreased Rds(on). The UMOS-4 process reduces the size of the trenches and other structures with an ultra-fine 0.25 micron design rule. In addition, by fabricating MOSFET structures along the sides of the trenches, designers can reduce the amount of silicon space required. Together, these technologies achieve a cell density of well over 180 Mcells/in².
The NP Series also features advanced TO-263 and TO-252 packages fabricated with a unique multi-bonding technology that increases the number of bonding wires from two and three to three and four, respectively. This additional bonding capability enables the MOSFET to manage high currents with very low on-resistance, all in a relatively small package that needs less battery power and less board space, resulting in easier management of heat dissipation.
The first device in the series, the NP110 MOSFET, is available now in production quantities. Pricing starts around $1.85 in 10,000-unit quantities. The NP110 MOSFET is also available in a RoHS-compliant package. Pricing, specifications, and availability are subject to change.
