IR’s New DirectFET® MOSFET Chipset Offers Low On-State Resistance for 25V Applications
International Rectifier, (IR)® introduced a new DirectFET® MOSFET chipset for high-current dc-dc converters used in notebook, high-end desktops and servers, and advanced telecom and datacom systems.
"Developed using the latest HEXFET® MOSFET silicon technology and IR’s benchmark DirectFET packaging technology, the IRF6712S control FET and IRF6716M sync FET are characterized with extremely low package inductance and device on-state resistance, gate charge and gate-to-drain charge to achieve high efficiency and superior thermal performance," said John Lambert, Technical Marketing Engineer for IR’s Discrete Products. "This allows operation up to 25A per phase, in a small, sleek form factor."
With low typical RDS(on) of only 1.2mΩ at 10VGS and 2.0 mΩ at 4.5VGS, the IRF6716M MOSFET achieves the lowest on-state resistance for a 25V device, making it well-suited to synchronous rectifier sockets for high-frequency, high-current dc-dc converters used in applications that power high-current loads. The IRF6716M features a slim 0.7mm profile and the MX pad outline common to two generations of devices, allowing an easy migration from existing low-voltage DirectFET MOSFETs.
Optimized for high-current applications where a single control MOSFET is desired, the IRF6712S achieves a low gate charge (Qg) of 13nC and gate-to-drain charge (Qgd) of 4.4nC combined with low typical on-state resistance of 3.8 mΩ at 10VGS and 6.7 mΩ at 4.5VGS. The IRF6712S also presents a 0.7mm profile and the SQ pad outline common to two generations of control devices, allowing an easy migration from existing low-voltage MOSFETS.
Pricing for the IRF6716M is US$ 1.27 each in 10,000-unit quantities and US$ 0.59 for the IRF6712S each in 10,000-unit quantities. Production orders are available immediately.
