High-Current Automotive N-ch FETs in TO-220SM(W)
Toshiba America Electronic Components, Inc. (TAEC) today announced the expansion of its lineup of automotive N-channel power MOSFETs with the launch of two new devices: TK160F10N1 and TK200F04N1L. Target applications include electric power steering (EPS), dc-dc converters, motor drivers and load switches. The TK160F10N1 is a 100V, 160A MOSFET and the TK200F04N1L is a 40V, 200A class MOSFET. Both feature a chip that uses the U-MOSVIII-H process in a TO-220SM(W) package that has had its package resistance reduced to its limit with an internal connector.
This allows the devices to claim industry-leading low on-resistance characteristics: (R(DS(ON)) = 0.78m (typical) at V(GS) = 10V for the TK200F04N1L; R(DS(ON)) = 2.0m (typical) at V(GS) = 10V for the TK160F10N1). Both devices feature low thermal resistance of R(th(ch-c)) = 0.4 degrees C/W (max) and 175 degrees C max channel temperature rating.
Their U-MOSVIII-H structure also brings design advantages for handling spike noise or oscillation in switching operation, enabling a reduction in EMI noise. Additionally, when used for large motors or switching applications, the new MOSFETs can reduce conduction loss. The TK160F10N1 and TK200F04N1L also enable equipment to be designed with high efficiency and low heat generation for applications requiring voltage margins, including motors for 48V battery systems, switching applications and reactor loads.
