500V MOSFETs Built on Super Junction Technology
Vishay Intertechnology, Inc. today announced the first MOSFETs in a new 500 V family that features the same benefits of low conduction and switching losses as the company's 600 V and 650 V E Series devices. The low on-resistance and gate charge of the new devices will play a key role in saving energy in high-power, high-performance consumer products, lighting applications, and ATX/silver box PC switch mode power supplies (SMPS).
Built on second-generation Super Junction Technology, the new Vishay Siliconix SiHx25N50E 500 V MOSFETs provide a high-efficiency complement to Vishay's existing 500 V D Series components based on high-performance planar technology. The 25 A devices feature low on-resistance of 145 mΩ in a variety of package options, including the TO-220 (SiHP25N50E), TO-247AC (SiHG25N50E), and the thin leaded TO-220 FULLPAK (SiHA25N50E), which offers a low profile optimized for slim consumer products.
The new MOSFETs provide ultra-low gate charge of 57 nC and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications. As in Vishay's 600 V and 650 V E Series devices, the low on-resistance and optimized switching speed of the 500 V technology can increase efficiency and power density in power factor correction (PFC), two-switch forward converter, and flyback converter applications.
The RoHS-compliant devices are designed to withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100 % UIS testing. Samples and production quantities of the 500 V SiHP25N50E, SiHG25N50E, and SiHA25N50E power MOSFETs are available now, with lead times of 16 to 17 weeks. Pricing for U.S. delivery only starts at $2.25 per piece for 1,000-piece orders.
