1200V Half-Bridge Gate Driver for IGBTs or FETs

IXYS Integrated Circuits Division (ICD), Inc. announced the immediate availability of the IX2120B 1200V half-bridge gate driver IC. The IX2120B is a high-voltage IC that can drive discrete power MOSFETs and IGBTs that operate up to 1200V. Both the high-side and low-side outputs feature integrated power DMOS transistors that are capable of sourcing and sinking 2A of gate drive current.

High voltage level-shift circuitry allows low voltage logic signals to drive IGBTs in a high-side configuration operating up to 1200V. The IX2120B's 1400V absolute maximum rating provides additional margin for high-voltage applications.

“This product complements the full selection of power driver IC’s that we have developed and introduced to the power management market in the last 3 years. It is designed and produced in our internal wafer fabrication facility on the proven advanced SOI process”, Commented Dr. Nathan Zommer CEO and CTO of IXYS Corporation.

The IX2120B is manufactured on IXYS ICD's advanced HVIC Silicon on Insulator (SOI) process, making the IX2120B extremely robust and virtually immune to negative transients and high dV/dt noise. The inputs are 3.3V and 5V logic compatible. Internal under voltage lockout circuitry for both the high-side and low-side outputs prevents the IX2120B from turning on the discrete power IGBTs until there is sufficient gate voltage. The output propagation delays are matched for use in high-frequency applications.

The IX2120B can drive power discrete MOSFETs and IGBTs in half-bridge, full-bridge, and 3-phase configurations. Typical applications include motor drives, high-voltage inverters, uninterrupted power supplies (UPS), and dc-dc converters. The IX2120B is available in 28-pin SOIC package. The IX2120B is available in production quantities. Pricing for OEM quantities of 50KU is $1.90.