EEPower

Latest Wide Bandgap News

Categories

Gallium-Nitride Enables World’s Smallest Adapter for World’s Fastest Laptop

Gallium-Nitride Enables World’s Smallest Adapter for World’s Fastest Laptop


News Oct 16, 2019 by Paul Shepard
1-kW, 80 Plus Titanium, GaN + Silicon Digital AC-DC Power Supply Reference Design

1-kW, 80 Plus Titanium, GaN + Silicon Digital AC-DC Power Supply Reference Design


News Oct 15, 2019 by Paul Shepard
GaN Totem-Pole PFC Design Guide and Power Loss Modeling

GaN Totem-Pole PFC Design Guide and Power Loss Modeling


News Oct 11, 2019 by Paul Shepard
200mm Semi-Insulating SiC Substrates for RF Power Amplifiers in 5G Antennas

200mm Semi-Insulating SiC Substrates for RF Power Amplifiers in 5G Antennas


News Oct 11, 2019 by Paul Shepard
Bosch Enters Automotive Silicon Carbide Race

Bosch Enters Automotive Silicon Carbide Race


News Oct 08, 2019 by Paul Shepard
Eval Board for New 4-Pin SiC MOSFETs with Up To 35% Lower Switching Losses

Eval Board for New 4-Pin SiC MOSFETs with Up To 35% Lower Switching Losses


News Oct 08, 2019 by Paul Shepard
Advancing Gallium-Nitride Microelectronics Technology for the Defense Community

Advancing Gallium-Nitride Microelectronics Technology for the Defense Community


News Oct 05, 2019 by Paul Shepard
WIN Semiconductors Offers Sample Kits for its GaN on SiC 0.15μm-gate Technology

WIN Semiconductors Offers Sample Kits for its GaN on SiC 0.15μm-gate Technology


News Oct 02, 2019 by Paul Shepard
3rd Edition Gallium-Nitride Textbook Focuses on Power Conversion Applications

3rd Edition Gallium-Nitride Textbook Focuses on Power Conversion Applications


News Oct 02, 2019 by Paul Shepard
100V, 5A Gallium-Nitride-Based Half-Bridge Development Board

100V, 5A Gallium-Nitride-Based Half-Bridge Development Board


News Sep 30, 2019 by Paul Shepard
Power Integrations Delivers One-Millionth GaN-Based InnoSwitch3 IC

Power Integrations Delivers One-Millionth GaN-Based InnoSwitch3 IC


News Sep 30, 2019 by Paul Shepard
Mitsubishi Develops Trench-Type SiC-MOSFET with Unique Electric-Field-Limiting Structure

Mitsubishi Develops Trench-Type SiC-MOSFET with Unique Electric-Field-Limiting Structure


News Sep 29, 2019 by Paul Shepard
SiC to Enable 1MW Inverter in the Size of a Compact Suitcase

SiC to Enable 1MW Inverter in the Size of a Compact Suitcase


News Sep 27, 2019 by Paul Shepard
Gallium Nitride Discovery Aims for Efficient P-Type GaN Transistors

Gallium Nitride Discovery Aims for Efficient P-Type GaN Transistors


News Sep 26, 2019 by Paul Shepard
10kW Bi-Directional, Dual Active Bridge Reference Design with SiC MOSFETs

10kW Bi-Directional, Dual Active Bridge Reference Design with SiC MOSFETs


News Sep 25, 2019 by Paul Shepard
Cree to Establish SiC Corridor on the East Coast of the United States

Cree to Establish SiC Corridor on the East Coast of the United States


News Sep 23, 2019 by Paul Shepard
OPPO Employs GaN MOSFETs in Three New Flash Charge Technologies

OPPO Employs GaN MOSFETs in Three New Flash Charge Technologies


News Sep 19, 2019 by Paul Shepard
3-Phase, 1.25kW, 200Vac GaN Inverter Reference Design for Integrated Drives

3-Phase, 1.25kW, 200Vac GaN Inverter Reference Design for Integrated Drives


News Sep 17, 2019 by Paul Shepard
FPGA-Based Inverter Modules use Custom SiC MOSFETs to Power Electric Racing Car

FPGA-Based Inverter Modules use Custom SiC MOSFETs to Power Electric Racing Car


News Sep 14, 2019 by Paul Shepard
1.2kW GaN FET Half-Bridge Synchronous Buck or Boost Evaluation Board

1.2kW GaN FET Half-Bridge Synchronous Buck or Boost Evaluation Board


News Sep 12, 2019 by Paul Shepard