Sanyo To Release Thinnest MOSFET For Mobile Devices
Media reports reveal that Sanyo Electric Co Ltd. has developed what it describes as the industry’s thinnest MOSFET. The devices have a mounting area of 1 x 1.4mm and a thickness of 0.37mm, and weigh only 1mg (which is 86% lighter than the previous product). It is intended for mobile phones and other small portable devices.
To develop the small MOSFET, Sanyo employed the "up-drain structure," ; an electrode structure where source, drain and gate terminals are on the same surface of chip packaged with CSP (chip size package). The previous product is a general MOSFET chip with its drain terminal located on the reverse side, and the chip is sealed with mold resin.
Sanyo claims that its product has an advantage in that it features the industry’s highest level of on-resistance characteristics despite the small size. The on-resistance is 50mΩ (p-channel model, gate drive voltage: 4.5V) and 27mΩ (n-channel model, gate drive voltage: 4.5V). The on-resistance characteristics were realized through use of HDDL (high doped diffusion layer) structure Sanyo’s diffusion layer forming technology.
Sanyo will release two p-channel models and one n-channel model. The withstand voltages of the p-channel products are -12 and -20V. And the n-channel product has a withstand voltage of +20V.
The price of a sample is reportedly 100 yen (approx US$1) for any of the three. The company will start shipping samples in May 2009 and volume production models in July 2009.
