Renesas Electronics Introduces New High-Voltage Power MOSFET
Renesas Electronics Corp. announced the availability of a new high-voltage N-channel power metal-oxide-semiconductor field-effect-transistor (MOSFET), the RJK60S5DPK, for power supply units that delivers high efficiency. The new power MOSFET provides low power consumption for PC servers, communication base stations and solar power generation systems.
The RJK60S5DPK power MOSFET is well suited for use in the primary power switching circuit of a power supply unit, which converts ac to dc. It is the first product in Renesas Electronics’ high-voltage power MOSFET series that employs a high-precision super junction structure to achieve a figure of merit (FOM), a key overall performance index for power MOSFET devices, which is approximately 90% improved from that of the company’s existing products.
The new RJK60S5DPK power MOSFET achieves an on-resistance of 150mΩ, standard value at ID = 10 A, VGSS = 10 V), approximately 52% lower than that of existing Renesas Electronics power MOSFETs. This reduces the amount of loss that occurs during the power conversion.
Renesas Electronics’ new power MOSFET has a drive capacitance (Gate charge Qgd, of only 6 nC (nanocoulomb, standard value at ID = 10 A, VGSS = 10 V), which affects the switching speed, approximately 80% less than that of existing Renesas Electronics products. This makes it possible to boost power-conversion efficiency through the use of high-speed switching.
The main specifications of the RJK60S5DPK include: a Drain to Source Voltage of 600V, a Gate to Source Voltage of 30V, and a Drain Current of 20A.
The package for the new RJK60S5DPK power MOSFET is equivalent in size to the TO-3P standard package, and the pin assignments conform to the industry standard. This means it can easily be mounted on switching power supply circuit boards that have been evaluated using conventional planar MOSFET devices.
The products in the high-precision super junction structure power MOSFET series can deliver on-resistance per unit of area approximately 80% lower than that of products in the company’s existing planar structure series, so if the on-resistance remains the same, the chip area can be decreased. Taking advantage of this, Renesas Electronics plans to release in the future a variety of power device products with smaller package sizes, such as products using the TO-220FL (10 × 15mm) package that provide the performance of existing products using the TO-3P (15.6 × 19.9 mm) package.
Samples of Renesas Electronics’ new RJK60S5DPK power MOSFET are available now priced at US$5 each in sample quantities. Mass production is scheduled to begin starting April 2011 with a combined volume of 500,000 units per month projected by October 2011.
