IXYS Corp. (Santa Clara, CA) announced its IXDD415, a new CMOS high-speed, high-frequency, MOSFET/IGBT driver IC. Each IC has two driver channels, each capable of 15A peak into a capacitive load, making them suitable for controlling high-current, high-frequency power MOSFETs and IGBTs.
The driver IC features high-speed, high-frequency drive capabilities with low rise and fall times on the order of 2 nanoseconds and switching frequencies up to 45MHz. It operates over a very wide supply voltage range of 8V to 30V, and can be driven by either TTL or CMOS input signals. Each driver is fully immune to latch-up within the range of 0A to 15A output current. A low propagation delay time and a low output impedance make it extremely useful for driving high-frequency, medium-current MOSFETs or medium-current fast IGBTs. It is available in the standard 28-pin SOIC package (IXDD415SI).
The IXDD415 is suitable for applications in the RF and power electronics industries, including Class D and E switching RF amplifiers, multi-megahertz dc/dc converters and switch-mode power supplies, pulse transformer drivers, pulse generators, pulsed laser-diode drivers, and acoustic transducer drivers.
Samples are available off the shelf, with delivery of production quantities having lead times of 8 to 12 weeks.
