New Industry Products

IR Trench IGBTs Reduce Power Dissipation Up to 60%

April 16, 2006 by Jeff Shepard

International Rectifier has added four 600V insulated gate bipolar transistors (IGBTs) that can reduce power dissipation in inverters by up to 60%, in motor control applications up to 2.5kW. Co-packaged with ultrafast soft recovery diodes, these IGBTs have lower collector-to-emitter saturation voltage (VCE(on)) and total switching energy (ETS) than punch-through and non-punch-through type IGBTs.

The combination of low VCE(on) and ETS of trench IGBTs result in reduced power dissipation and higher power density in motion control applications with wide range of switching frequency conditions such as in air conditioner and refrigerator compressors, vacuum cleaners, washing machines, dishwashers, ventilation fans, industrial drives and circulating pumps.

The trench IGBTs, part of IR's iMOTION™ integrated design platform, increase current density and can deliver up to 60% higher rms current in the same package compared to previous devices on the market. The reduced power dissipation IGBT can result in a 50% heatsink size reduction.

Other performance benefits include wider square reverse bias safe operating area (RBSOA), up to 175°C maximum operating temperature, high peak turn-off capability, positive VCE(on) temperature coefficient and short-circuit rating of 5µs and high dV/dt (10kV/µS) induced turn-on immunity. In addition, the internal ultrafast soft recovery diode improves efficiency and reduces EMI.

The new IGBT discrete devices are available now. Pricing is as follows, in US dollars and 1,000-quantity: IRGB4056DPbF, $1; IIRGB4061DPbF, $1.28; IRGB4062DPbF, $1.65; IRGP4062DPbF, $1.95. Prices are subject to change. The IGBTs are lead-free and RoHS compliant.