Advanced Power Technology (APT, Bend, OR) announced a new generation of 600V and 1,200V IGBTs utilizing its proprietary POWER MOS 7 technology. Applications include dc/dc converters, power factor correction pre-regulators, switch-mode power supplies, welders, UPSs, motor controls and inverters.
The new POWER MOS 7 IGBTs utilize APT's patented metal-on-polysilicon gate structure, and provide higher efficiency than MOSFETs in many switch-mode power supply applications at frequencies up to 200kHz, according to the company. The 600V IGBTs are designed to replace 500V/600V MOSFETs and the 1,200V IGBTs are designed to replace 1,000V/1,200V MOSFETs in switch-mode power supply, power-factor correction and other high-power applications. The POWER MOS 7 technology improves power density, system efficiency and reliability, and enables operation up to 150kHz without current derating. Conduction losses are lower, especially at high temperatures, and gate-charge is reduced. In addition, the POWER MOS 7 IGBTs are available co-packaged with a fast-recovery, antiparallel diode optimized for low reverse-recovery charge.
The POWER MOS 7 IGBTs are available in two die sizes for 600V and one die size for 1,200V, with and without anti-parallel diodes, in 10-die package combinations. Pricing ranges from $5.63 to $27.64 for 1,000-piece quantities, depending on the current rating and package.
