Demand for SiC products remains strong across multiple industries as Wolfspeed aggressively expands SiC production to multiple facilities.
January 08, 2023 by Mike Falter
Researchers in Israel and the United States have focused on hydrogen solar fuel production to solve the problems associated with the conventional…
November 24, 2022 by Darshil Patel
Gallium nitride (GaN) is the key enabler for high-frequency, and simultaneously high-efficiency topologies.
September 05, 2021 by Stephen Oliver
An interview with Dr. Rainer Käsmaier about SiC-based products in the rapidly growing power semiconductor market.
January 14, 2020 by Roland R. Ackerman
At its annual Technologies & Products Press Conference 2019 in Munich, TDK managers Dr. Lucia Cabo and Fernando Rodríguez presented film…
December 18, 2019 by Roland R. Ackerman
Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Dr. Alex Lidow’s thoughts on where the…
November 11, 2019 by Bodo Arlt
I began writing this article with the expectation that the answer to whether GaN transistors have become as easy to use as MOSFET would be…
October 31, 2019 by Scott Wolf
GaN brings compelling advantages in terms of efficiency for wall chargers and other power supply products, but achieving these in a cost-effective…
October 21, 2019 by Sinjin Dixon-Warren
Journalists from all over Europe joined ROHM Semiconductor to enjoy the Formula E Race in Monaco this year. An eventful weekend with interesting…
July 12, 2019 by Holger Moscheik
Energy Conversion Congress and Expo (ECCE)—the foremost IEEE conference in the field of electrical and electromechanical energy…
December 05, 2018 by Gary Dolny
This article presents the discussions from an interview of Littelfuse on its acquisition of IXYS.
July 06, 2018 by Littelfuse
Bodo´s Power Systems recently interviewed Christian André, Heiko Metzger, Dr. Andreas Bauknecht, and Aly Mashaly, the management of ROHM Europe…
June 08, 2018 by Roland R. Ackerman
This article talks about the interview with Gene Sheridan from Navitas Semiconductors on GaN Technology.
August 21, 2017 by Gene Sheridan
This article discusses the Silicon Carbide Technology with Chris Dries from USCi.
June 13, 2017 by Henning Wriedt
The past few years have been notable for the increased rate of investment in developing alternative semiconductor materials such as silicon carbide…
May 12, 2017 by Peter Wawer
Back in the dark days after the internet bubble burst, Nortel had demised, and high tech in Canada’s Silicon Valley North was in the doldrums.…
January 06, 2017 by Girvan Patterson
Five years ago, in this column, I wrote an editorial entitled, “When Wide Bandgap?” In that piece, I predicted, “The key to success in silicon
October 03, 2016 by Dan Kinzer
Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.” While silicon carbide devices
June 06, 2016 by Greg Evans
Whenever we talk about Silicon Carbide and its applications, our thoughts jump to Silicon Carbide MOSFET power modules, the so called “Full…
April 01, 2016 by Stefan Hauser
This article discusses the best time to switch from 4 to 6-inch wafers for the fabrication of Silicon Carbide (SiC) power semiconductor devices.
January 01, 2016 by Roger Kinnear
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