Richardson RFPD Introduces New Family of 650 V GaN E-HEMTs from GaN Systems

Richardson RFPD Introduces New Family of 650 V GaN E-HEMTs from GaN Systems

GS-065-0xx-1-L available as 3.5 A, 8 A, and 11 A devices

March 26, 2019 – Geneva, Ill.: Richardson RFPD, Inc. announced today the availability and full design support capabilities for a new family of 650 V GaN E-HEMTs from GaN Systems Inc.

The GS-065-0xx-1-L devices are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature:

  • Industry standard 5 mm x 6 mm PDFN packages
  • Assembly using standard SMT process
  • Scalable: 3.5 A to 11 A in the same footprint
  • Fast, clean switching speed
  • High switching frequency (20 MHz+)
  • Low switching losses
  • Low EMI
  • High efficiency
  • Kelvin sense
  • Zero Qrr
  • Bottom side cooling

Additional key features of the GS-065-0xx-1-L include:

Part Number Voltage (V) Current RDS(on) Package / Size (mm)
GS-065-004-1-L 650 3.5 A 500 mΩ 5 x 6 PDFN
GS-065-008-1-L 650 8 A 225 mΩ 5 x 6 PDFN
GS-065-011-1-L 650 11 A 150 mΩ 5 x 6 PDFN

 

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