Full-SiC 1200V 500A Low Inductance H-Bridge Phase-leg Module in Standard Footprint
This article features Proton-Electrotex MCDA – an advanced 1200V full-SiC module in well-known footprint, featuring an ultra-low inductance H-Bridge design.
Proton-Electrotex introduces MCDA – an advanced 1200V full-SiC module in well-known footprint, featuring an ultra-low inductance H-Bridge design with excellent electrical and thermal performance. Depending on the application, a module can have either H-Bridge or Phase-leg configuration. Special attention was paid to the layout structure, resulting in clean and fast switching.
Module Features
- Latest generation SiC MOSFET and SBD
- Low stray inductance: <8nH
- Switching cell topology
- H-Bridge (250A) or Phase leg (500A)
- Low RDS(on) (<3.5 mOhm)
- Optimized gate-source circuit
- AlSiC base plate + AlN substrate
- Low die thermal coupling
Module Advantages
- High thermal cycling performance
- Standard footprint
- Low losses
- Fast and clean switching with minimum voltage overshoot and ringing
- Excellent die current distribution
- High thermal performance
About Proton-Electrotex
Proton-Electrotex is one of the Russian leaders in the design and manufacture of power semiconductor diodes, thyristors, modules, coolers, IGBTs (IGBTs), as well as power units for use in various electric energy converters. The company was founded and began production in 1996 on the leased premises of the Proton plant. Since then, Proton-Electrotex has developed its own infrastructure for the entire production cycle. Production is equipped with modern production lines, measuring equipment of our own production and areas for “clean technologies” with full compliance with the requirements for electronic products and microelectronics.