Next Generation Silicon Carbide Power Device with 3DSiC® Technology

Next Generation Silicon Carbide Power Device with 3DSiC® Technology

Ascatron provides next generation Silicon Carbide (SiC) power semiconductors using its proprietary 3DSiC® technology with a quality and performance unattainable through current methods. SiC radically reduce losses in electrical power converters and lowers system costs, making it key for electric vehicles and renewable energy. The global impact will thus be large.

Ascatron, with background in producing advanced SiC epi material for global customers, has recently transformed from a service provider to a device product company. The first products available for customer testing are diodes rated to 1200V, 1700V and 10kV. MOSFET switches are under development and will be introduced 2018.

“We have developed a unique material technology that makes it possible to fully use the potential of SiC to handle very high power with minimal losses, while maintaining the reliability of silicon”, says Adolf Schöner, CTO of Ascatron. “We call it 3DSiC® and is based on our expertise in producing advanced SiC epitaxy material. The technology has the potential to lower the losses up to 30% compared to conventional solutions”.

The 3DSiC® technology enables a modular design of Ascatron product line. Each device is divided in a high voltage module related to the desired voltage class, and a low voltage part for each type of component. Combination of different modules gives a wide range of products.  

“Our business target is to be highly trusted and innovative supplier of SiC semiconductors for power electronics in industry, automotive and energy”, says Christian Vieider, CEO of Ascatron. “We foresee a period of technology change when shifting from silicon to SiC and target to take part in such industry consolidation”.

More information: Ascatron