250V Ultra-Junction X3-Class Power MOSFETs

IXYS announced a power semiconductor product line: 250V Ultra-Junction X3-Class HiPerFET™ Power MOSFETs. With on-resistances and gate charges as low as 4.5 milliohms and 21 nanocoulombs, respectively, these devices enable highest power densities and energy efficiencies in a wide variety of high-speed power conversion applications.

Developed using a charge compensation principle and proprietary process technology, the new MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge) which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry (5 milliohms in the TO-264 package and 4.5 milliohms in the SOT-227, for instance). 

More information: IXYS