Lowest Rss MOSFET with Advanced CSP Technology

Lowest Rss MOSFET with Advanced CSP Technology

Alpha and Omega Semiconductor Limited announced the release of AOC3860, a common-drain 12V dual n-channel MOSFET with the lowest on-resistance in the product family of 2.15mOhm typical at 4.5V gate drive. This device provides further improved source-to-source resistance, which is a critical factor for smart phone makers to achieve faster battery charge with a higher charging current. The demand for faster charge comes from both the higher capacity of the battery pack and heavy use of the smart phone with data ranging from email and web browsing to video streaming. With the heavy duty use and shorter time for standby, charging has become a great feature for the newest smart phones. The market is seeing charging power increase from the traditional 5W to larger wattages of 15W or 25W, by raising either output voltage or output current. For battery packs, this always translates to a higher charging current. A MOSFET is a critical part of the battery charging circuit, which needs to provide reliable protection with minimum power loss and temperature rise. The AOC3860 is the latest product with the best Rss and the smallest mounting size in the AlphaDFN™ family, which is a market-proven product family in the battery protection module market. The typical Rss is 2.15mOhm with 4.5V gate voltage, and 2.25mOhm with 3.8V gate voltage. The chip size is further reduced to a 3.05x1.77mm. “AOC3860 is a great example of our effort in continuously improving product performance with AOS process technology and knowledge base. Compared with our previously released product, we were able to reduce Rss by 10%, and at the same time significantly reducing the device size by 14%.

More information: Alpha and Omega Semiconductor