1200V Silicon-Carbide Diodes Deliver Superior Efficiency

1200V Silicon-Carbide Diodes Deliver Superior Efficiency

A full range of 2A-40A 1200V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes from STMicroelectronics enables a wider range of applications to benefit from the high switching efficiency, fast recovery, and consistent temperature characteristics of SiC technology.

ST’s SiC-diode manufacturing process creates extremely robust devices with the best-in-class forward voltage (lowest VF), giving circuit designers extra freedom to achieve high efficiency and reliability using diodes with lower current rating and therefore lower cost. This makes SiC technology more accessible for cost-conscious applications including solar inverters, industrial motor drives, home appliances, and power adapters.

At the same time, performance-oriented applications that demand SiC for superior efficiency, low weight, small size, or best thermal properties can extend these advantages using ST’s latest 1200V SiC diodes. The higher efficiency margin provided by their lower forward voltage drop (VF) delivers important benefits for automotive equipment such as On-Board Battery Chargers (OBC) and charging stations for Plug-In Hybrid or Electric Vehicles (PHEV/EV). On the other hand, overall robust electrical performance ensures a perfect fit in telecom and server power supplies, high-power industrial Switched-Mode Power Supplies (SMPS) and motor drives, uninterruptible power supplies (UPS), and large solar inverters.

More information: STMicroelectronics