Next-Generation Output Transistor Arrays

Next-Generation Output Transistor Arrays

Toshiba Electronics Europe has announced a series of next-generation output transistor arrays that feature a DMOS FET type sink output. The TBD62183AFNG and TBD62183AFWG are ideal for level shift applications and for directly controlling photocouplers, LEDs, and relays that require high-voltage input signals.

The TBD62183AFNG and TBD62183AFWG deliver high-voltage drive capabilities with an input rating of 30V and output rating of 50V. An 8-channel sink type output is incorporated into the small SMD packages, enabling reduced component count for the control of multiple circuits.

In addition, the TBD62083A-series has an IOUT of 500mA/ch while the TBD2183A-series is designed for low power applications with a maximum IOUT of 50mA/ch.

By adopting a DMOS FET type output, the two new transistor arrays eliminate the need for a base current for the input pin. The devices achieve operation with a low maximum input current of 0.1mA @VIN=3V, while delivering very low power consumption. They also have output characteristics similar to the Vce (sat) properties of a Darlington Bipolar transistor, making them suitable for replacing in-line bipolar transistors in Toshiba’s TD62083A series.

More information: Toshiba