The World's Fastest GaN FET Driver

The World's Fastest GaN FET Driver

Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the word’s fastest gallium nitride (GaN) field-effect transistor (FET) driver, the UltraCMOS® PE29100. Built on Peregrine’s UltraCMOS technology, this GaN driver empowers design engineers to extract the full performance and speed advantages from GaN transistors. Designed to drive the gates of a high-side and a low-side GaN FET in a switching configuration, the PE29100 delivers the industry’s fastest switching speeds, shortest propagation delays and lowest rise and fall times to AC-DC converters, DC-DC converters, class D audio amplifiers and wireless charging applications. 

GaN-based FETs are disrupting the power conversion market and are displacing silicon-based metal–oxide–semiconductor field-effect transistors (MOSFETs). 

“Our enhancement-mode GaN (eGaN®) transistors deliver a whole new spectrum of performance compared to MOSFETs,” says Alex Lidow, Ph.D., CEO and co-founder at EPC. “GaN FET drivers, like Peregrine’s UltraCMOS PE29100, enable design engineers to unlock the true potential of eGaN FET technology. The availability of the PE29100 further enhances our ability to deliver the best possible solution into the power conversion market where size, efficiency and simple design are critical.” 

Peregrine’s UltraCMOS technology platform is the driving force behind the PE29100’s industry- leading speed. The technology enables integrated circuits to operate at much faster speeds than conventional CMOS technologies. 

More information: Peregrine Semiconductor