T-Series Power Modules with 7th Generation IGBT and NX-Type Package

T-Series Power Modules with 7th Generation IGBT and NX-Type Package

Mitsubishi Electric Corporation announced the introduction and commercialization of its T-Series power semiconductor modules. The modules realize improved power loss and reliability for general-purpose inverters, elevators, uninterruptible power supplies (UPS), wind- and solar-power equipment, servos and other industrial equipment.

The T-Series, featuring 7th Generation CSTBTTM chip and 7th Generation diode, achieve low power loss and low EMI noise. The cell design of the IGBT chip is optimized to have an improved controllability of the dv/dt by the gate resistor. The Relaxed Field of Cathode (RFC) diode chip is incorporating a new backside diffusion process leading to suppression of recovery-voltage surge.

New T-series is based on the well-established NX-Type package featuring the market standard 62mm low profile outline. The line-up covers various circuit topologies such as 2in1, 6in1 and 7in1 and a comprehensive range of current ratings at 650V, 1200V and 1700V to suit a wide scope of applications.

The newly developed SLC (SoLid Cover)-Technology enables the design of inverters with higher output current, higher power density and improved reliability in both power and temperature cycling. The SLC-Technology is combining a resin-Insulated Metal Baseplate (IMB) and hard direct potting resin.

The IMB consists of an electrically insulating resin layer with a top and bottom side copper layer by direct bonding, thus eliminating the conventional metal baseplate and the substrate solder layer. Less layers and matched thermal expansion coefficients lead to high thermal cycling capability, exceeding several times the conventional capability. At the same time, the thermal resistance is reduced by 30% compared to conventional modules having aluminum oxide insulation. The SLC concept utilizes one common substrate instead of multiple ceramic substrates. This approach eliminates wire bond interconnections between different substrates, thus increasing the effective area available for chip-mounting and reducing the internal wiring inductance by 30%.

The T-Series NX-Type package is using direct potting resin instead of silicone gel. This hard mold wraps around the interconnections on the chip surface and spreads the mechanical stress more homogeneously since the specially controlled epoxy resin is matched to the thermal expansion rates of other materials and featuring improved adhesion. IGBT modules with such direct potting resin achieve a significantly improved power cycling capability. 

More information: Mitsubishi Electric