Half-Bridge Evaluation Board Simplifies GaN Transistor Testing

Half-Bridge Evaluation Board Simplifies GaN Transistor Testing

GaN Systems announces its Half-Bridge Evaluation Board which demonstrates the performance of its GaN enhancement mode power semiconductors in real power circuits. The fully functional GS66508T-EVBHB Evaluation Board is easily configured into any half-bridge-based topology, including synchronous boost and buck conversion modes, as well as pulsed switching to evaluate transistor waveforms. 

Accompanied by a Quick Start Instruction Guide and YouTube video links, the Evaluation Board can be installed and used in minutes. Each development kit comes with full documentation, including Bill-of-Materials component part numbers, PCB layout and thermal management, and a gate drive circuit reference design to help system engineers develop their products. Designed to provide electrical engineers with a complete working power stage, the evaluation board consists of two 650 V, 30 A GS66508T GaN FETs, half-bridge gate drivers, a gate drive power supply, and heatsink. The GS66508T high power transistors are based on GaN Systems’ proprietary Island Technology® and belong to its 650 V family of high density devices which achieve extremely efficient power conversion with fast switching speeds of >100 V/nS and ultra-low thermal losses. 

More information: GaN Systems