Highest Current Gallium Nitride Power Transistor

Highest Current Gallium Nitride Power Transistor

GaN Systems Inc. launches the latest addition to its successful range of E-mode GaN-on-Silicon high power transistors based on its three core proprietary technologies. The new GaN high-power enhance-ment-mode device, designated the GS65516T, boasts the highest current capability on the market at 60A and further expands GaN Systems’ range of power switching semiconductors.  

The GS65516T 650V E-mode power switch features GaN Systems’ new proprietary topside cooling configuration announced in March this year, which allows the device to be cooled using familiar and conventional heat sink or fan cooling techniques. It is based on the company’s ultra-low FOM Island Technology® die design, packaged in low inductance and ther-mally efficient GaNPX™ packaging and measures 9.0mm x 7.6mm x 0.45mm. Additional features of the GS65516T 650V E-HEMT include reverse current capability, integral source sense and zero reverse recovery loss. Dual gate pads help design engineers achieve optimal board layout. The GS65516T suits high frequency, high efficiency power conversion applications such as on-board battery chargers, 400V DC-DC conversion, inverters, uninterruptable power supplies (UPS) and VFD motor drives, AC-DC power supplies (PFC and primary) and VHF small form factor power adapters. The GS65516T is available to customers packaged on tape and reel or mini-reel, through GaN Systems’ worldwide distribution partners. Pricing is available on request.

More information: GaN Systems