Enhancement Mode and Cascode Configuration GaN-on-Silicon Platforms

Infineon Technologies AG announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio. The company now offers both enhancement mode and cascode configuration GaN-based platforms optimized for high performance applications requiring superior levels of energy efficiency including Switch Mode Power Supplies (SMPS) used in server, telecom, mobile power and consumer goods such as Class D Audio systems. GaN technology significantly reduces the size and weight of power supplies which will open up new opportunities in end-products such as ultra-thin LED TVs.

“Infineon’s GaN-on-Silicon portfolio combined with the acquisition of IR’s GaN platform together with our partnership with Panasonic clearly positions Infineon as the technology leader in this promising GaN market,” stated Andreas Urschitz, President of the Power Management & Multimarket Division of Infineon Technologies AG. “In line with our ‘Product to System’ approach, our customers can now choose enhancement mode or cascode configuration technologies according to their application/system requirements. At the same time, Infineon is committed to developing Surface Mount Device (SMD) packages and ICs that will further leverage the superior performance of GaN in a compact footprint. As a real world example, using our GaN technology, a laptop charger found on the market today could be replaced by one that is up to four times smaller and lighter,” he added.

Infineon’s expanded offering will include dedicated driver and controller ICs which enable the topologies and higher frequencies that fully leverage the benefits of GaN. The offering is further enhanced by a broader patent portfolio, GaN-on-Silicon epitaxy process and 100V-600V technologies resulting from the acquisition of International Rectifier. Additionally, through a strategic partnership with Panasonic Corporation, Infineon and Panasonic will jointly introduce devices utilizing Panasonic’s normally-off (enhancement mode) GaN-on-Silicon transistor structure integrated into Infineon’s Surface Mount Device (SMD) packages, providing a highly efficient, easy-to-use 600V GaN power device with the added benefit of dual sourcing.

As a result, Infineon now offers customers complete system know-how combined with the most comprehensive range of GaN technologies and products in the industry. Additionally, the company holds best-in-class manufacturing capabilities, volume capacity and second sourcing for normally-off GaN power devices in an Infineon SMD package.

GaN-on-Silicon-based technology delivers increased power den-sity and higher energy efficiency in a smaller footprint compared to Silicon-based solutions, and is, therefore, well suited to a wide range of applications from consumer goods such as Television power supplies to Class D Audio amplifiers to SMPS used in server and telecom equipment. According to an IHS market research report, the GaN-on-Silicon market for power semiconductors is expected to grow at a compound annual growth rate (CAGR) of more than 50 percent, lead-ing to an extension of volume from US$15 million in 2014 to US$800 million by 2023.