3rd Gen SiC MOSFETs at PCIM

3rd Gen SiC MOSFETs at PCIM

ROHM will present its 1200V and 650V SiC MOSFETs based on a Trench Gate structure and is also preparing SiC MOSFETs with breakdown voltage of 1700V. Compared to conventional planar MOS-FETs the Trench MOSFETs reach about half of the same on-resistance over the whole temperature range while the stability of the Gate oxide film and of the Body Diode remains as high as with ROHM’s 2nd Generation SiC MOSFETs. The reverse recovery behaviour has been drastically reduced. In principle, there is no tail current during switching, resulting in faster operation and reduced switching loss by 30%. The result is higher reliability and increased current-carrying capacity at reduced cell density and minimum conductivity while keeping a compact format. ROHM MOSFETs are ideal for use in Switch Mode Power Supplies, Renewable Energy Inverters/Converters, EV/HV inverters and chargers.

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