Product Release    

UnitedSiC Introduces Kelvin Connection Parts into UF3C “FAST” FET Series

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, expands its UF3C FAST Series product offering by introducing an additional range of 650 V and 1200

Technical Articles    

High Bs Ferrite Material for High Power Application

There is no doubt that power electronics plays a critical role in the evolution of the overall infrastructure of energy supply, from motion control and drives

J.C. Sun

Technical Articles    

Current Source Gate Drivers Boost the Turn-On Performance of IGBT

Gate drive design engineers are often forced to use larger turn-on resistors than the IGBT ́s datasheet proposes in order to slow down the maximum dv

Wolfgang Frank and Holger Hüsken

Technical Articles    

High Voltage Thyristors with Self-protection Elements in Situations Beyond Safe Operation Mode

This article addresses the possibility of forming built-in overvoltage self-protection elements in high-voltage semiconductor thyristors with local proton irradiation of th

Dmitry Titushkin, Alexey Surma, Vladimir Verevkin, Igor Savin

Technical Articles    

Power Modules in Low Power Drive Applications

IGBT based power modules are used for a wide power range and voltage range.

Patrick Baginski

Product Release    

UnitedSiC Introduces New UF3C "FAST" Silicon Carbide FET Series

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, recently announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon ca

Product Release    

TI Announces New Portfolio of Ready-to-Use, 600V GaN FET Power Stages

Backed by 20 million hours of device reliability testing, high-voltage GaN FET with integrated driver and protection doubles power density in industrial and telecom app

Industry News    

GaN Systems Launches New Products and Provides GaN Design Expertise at China’s PEAC Power Conference

GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and Application Conference and Exposition (PEAC), an internation

Technical Articles    

Power Capacitors Toughen Up for Life with Wide Band Gap Semiconductors

High-efficiency power MOSFETs, rectifier diodes and Insulated Gate Bipolar Transistors (IGBTs) are needed to meet the requirements of power, temperature, and cost placed up

Reggie Phillips

Technical Articles    

Addressing the Challenges of Utilizing IGBT Technology in Power Modules

Power semiconductors are getting thinner, smaller, and faster, and the challenges for manufacturers that employ the latest chip technology in their power modules are ge

Daniel Hofmann