Technical Articles    

Using MOSFET Controllers to Drive GaN E-HEMTs

Before gallium nitride (GaN), the silicon (Si) MOSFET was the standard for power in adapter applications for decades.

Yajie Qiu, Juncheng (Lucas) Lu

Technical Articles    

The Double Pulse Test System for Power Semiconductor Dynamic Characterization

What is the ideal Double Pulse Test (DPT) system?A question we often ask as a test & measurement equipment manufacturer is ‘What is the ideal power semiconductor dynami

Ryo Takeda

Technical Articles    

High Voltage Power Semiconductor Modules with Enhanced Insulation Properties

One of the main parameters related to reliability and safety of power semiconductor modules is the strength of electric insulation.

S. D. Antonov, A. A. Pisarev, I. Y.Savin

Product Release    

MaxPower Introduces Innovative Series of Sub-Logic-Level Power Transistors

MOSFETs that can reliably handle high currents at ultra-low threshold voltages are rare.

Industry News    

Dr. Wolfgang Eder takes over as Chair of Infineon's Supervisory Board, Dr. Reinhard Ploss appointed Chief Executive Officer until the end of 2022

Munich, Germany, 6 August 2019 – The Supervisory Board of Infineon Technologies AG elected Dr. Wolfgang Eder (67) as its new Chair during its meeting today.

Industry News    

Transphorm Announces $18.5 Million Contract from Office of Naval Research to Establish Domestic Source of Gallium Nitride Epiwafers

Project to Produce First Commercialized Nitrogen Polar GaN for RF/mm-wave for DoD/5G

Product Release    

UnitedSiC Adds Two New 650V FET Packages to UF3C FAST Series

July 24, 2019, Princeton, New Jersey: UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, has added two new TO220-3L package options to its growing ran

Product Release    

ROHM's New Ultra-Compact Automotive-Grade MOSFETs Provide Superior Mounting Reliability

Enable greater miniaturization in automotive devices such as ADAS camera modules

Industry News    

Hyperloop Contest: Infineon Chips Accelerated Technical University of Munich's Pod to Fouth Win in a Row

Traveling at the speed of sound? The inventors of the Hyperloop believe that this will be possible someday.

Product Release    

CoolSiC MOSFET and TRENCHSTOP IGBT in Easy 2B Package Boost System Efficiency

Munich, Germany – 19 July 2019 – Compared with traditional 3-level neutral-point-clamped topologies, the advanced neutral-point-clamped (ANPC) inverter design supports an e