Cree Introduces New GaN MMIC Power Amplifier

Cree Introduces New GaN MMIC Power Amplifier

Cree’s CMPA601J025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).

GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths. 

 

Features 

  • > 30 dB Typical Small Signal Gain
  • 35 W Typical PSAT
  • Operation up to 22 V
  • High Breakdown Voltage
  • High Temperature Operation
  • Size 0.157 x 0.239 x 0.003 inches

 

Applications

  • Jamming Amplifiers
  • Test Equipment Amplifiers
  • Broadband Amplifiers
  • Radar Amplifiers
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