PLUTO A High Temperature 60A 1200V Power ModuleJuly 01, 2015 by EE Power Editorial
CISSOID, the leader in high temperature semiconductor solutions, releases CHT-PLUTO, a high temperature power module that can operate reliably between
CISSOID, the leader in high temperature semiconductor solutions, releases CHT-PLUTO, a high temperature power module that can operate reliably between -55°C and +225°C, delivering up to 60A. CHT-PLUTO is a dual Silicon Carbide MOSFET module primarily meant for half-bridges with 30A continuous capability for both low-side and high-side. The two independent switches can be used in parallel to deliver a total of 60A with a breakdown voltage in excess of 1200V and a low on-resistance of 23mΩ at 25°C and 50mΩ at 225°C at VGS=20V.
High operating frequencies can be used thanks to the low switching losses of the SiC transistors. CHT-PLUTO also embeds free-wheeling Schottky diodes with a low forward voltage Vf that reduces the power dissipation during dead times. Each switch can be controlled with a standard -5/+20V gate voltage.
CHT-PLUTO is available in a hermetically sealed 8 pins proprietary “HM8A” metal package with dimensions of 18mm x 29mm excluding mounting tabs. The devices are electrically isolated from the case of the package. The module features a low junc-tion-to-case thermal resistance of 0.7°C/W for each 30A channel. Two additional sources connectors allow for an easy and robust con-nection to the gate driver.