EPC Introduces 100 V eGaN Power Transistor for 48 V DCDC Motor Drives and Lidar ApplicationsMarch 15, 2019 by EE Power Editorial
Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum RDS(on) of 13.5mΩ and a 74 A pulsed output current for
Efficient Power Conversion (EPC) announces the EPC2052, a 100 V GaN transistor with a maximum RDS(on) of 13.5mΩ and a 74 A pulsed output current for high-efficiency power conversion in a tiny 2.25mm2 footprint. Applications demanding higher efficiency and power density no longer have to choose between size and performance.
The EPC2052 measures just 1.50 mm x 1.50 mm (2.25 mm2). Despite the small footprint, operating in a 48 V – 12 V buck converter, the EPC2052 achieves greater than 97% efficiency at a 10 A output while switching at 500 kHz and greater than 96% at a 10 A output while switching at 1 MHz enabling significant system size reductions. In addition, the low cost of the EPC2052 brings the performance of GaN FETs at a price comparable to silicon MOSFETs. Applications benefiting from this performance, small size, and low cost include 48 V input power converters for computing and telecom systems, LiDAR, LED Lighting, and Class-D audio.
“The ability of eGaN based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon. The 100 V, EPC2052, is significantly smaller than the closest silicon MOSFET and the high-frequency operation allows even further space savings opportunities to designers.” said Alex Lidow, EPC’s CEO.
EPC9092 Development Board
The EPC9092 development board is a 100 V maximum device voltage, half bridge featuring the EPC2052, and the LMG1205 gate driver from Texas Instruments. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 100 V EPC2052 eGaN FET.