UnitedSiC’s 1200V SiC FETs Deliver Industry Upgrade Path for IGBT Si SiC-MOSFET Users
UnitedSiC introduces its new UJ3C1200 series of SiC JFET cascades that simplifies design upgrades and provides an alternative-purchasing source for existing parts
Designers of power factor correction stages (PFCs), active frontend rectifiers, LLC converters, and phase shift full bridge converters can now upgrade existing system performance by using the new UJ3C1200 series of SiC JFET cascodes from UnitedSiC. With a voltage rating of 1200V and ON-resistances of 80 and 40 milliohms, these devices offer a ‘drop-in’ replacement solution for many existing IGBT, Si-MOSFET, and SiC-MOSFET parts with no change to gate drive circuitry. This simplifies design upgrades and provides an alternative-purchasing source for existing parts.
Applications include power factor correction stages, active frontend rectifiers, LLC converters, and phase shift full bridge converters where improvements to efficiency and/or power density are required. End uses include on-board EV chargers, battery charging for forklifts, PV inverters, welding and more.
Based on UnitedSiC’s Gen 3 SiC transistor technology, the UJ3C1200 series integrates a SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, high-performance body diode and easy gate drive of the MOSFET with the efficiency, speed and high-temperature rating of the SiC JFET. As a result, existing systems can expect a performance increase with lower conduction and switching losses, enhanced thermal properties and integrated gate ESD protection. In new designs, the UnitedSiC UJ3C1200 series delivers increased switching frequencies to gain substantial system benefits in both efficiency and reduction in size and cost of passive components, such as magnetics and capacitors.
- Low Rdson – Reduces conduction loss
- Flexible gate drive – Easy, drop-in replacement of IGBT, Si or other SiC MOSFET designs or use 0v to 12V simple gate drives and save BOM cost
- Low thermal resistance – Allows higher RMS currents delivering more output power
- ESD protection – Protected to HBM Class 2, ensures overvoltage spikes on the gate are clamped
- UJ3C120080K3S datasheet (PDF)
- UJ3C120040K3S datasheet (PDF)
About United Silicon Carbide
UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC-DC converters and traction drives, as well as telecom/server power supplies, variable-speed motor drives, and solar PV inverters.