EPC Launches 3rd Edition of Gallium Nitride GaN Textbook with Power Conversion Applications FocusOctober 01, 2019 by EPC
This features Efficient Power Conversion Corporation (EPC) publication of the third edition of “GaN Transistors for Efficient Power Conversion,” textbook.
GaN theory and applications, such as lidar, DC-DC conversion, and wireless power using gallium nitride FETs and ICs, form the focus of this third edition of “GaN Transistors for Efficient Power Conversion.”
Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons.
This textbook is designed to provide power system design engineering students, as well as practicing engineers, basic technical and application-focused information on how to design more efficient power conversion systems using gallium nitride-based transistors.
Gallium nitride (GaN) is a leading-edge technology that is displacing the venerable silicon MOSFET in power conversion applications. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly increase efficiency, and reduce the size, weight, and cost.
This timely third edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements and emerging applications. This book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and a wide range of applications.
- Discussions on the fundamental physics of these power semiconductors
- Practical guidance on layout and other circuit design considerations
- Application examples employing GaN including lidar for autonomous vehicles, DC-DC power conversion, RF envelope tracking used in 5G communication networks, wireless power, class-D audio, and high radiation environments
According to Dr. Fred C. Lee, Director, Center for Power Electronics Systems at Virginia Tech, “This book is a gift to power electronics engineers. It offers a comprehensive view, from device physics, characteristics, and modeling to device and circuit layout considerations and gate drive design, with design considerations for both hard switching and soft switching. Additionally, it further illustrates the utilization of GaN in a wide range of emerging applications.”
About the Authors
Collectively, the authors have over ninety-years of experience working in power transistor design and applications. All four authors have doctorates in scientific disciplines and are widely recognized published authors. They are pioneers in the emerging GaN transistor technology, with Dr. Alex Lidow concentrating on transistor process design and Drs. Michael DeRooij, Johan Strydom, David Reusch, and John Glaser focusing on power transistor applications.
EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power, envelope tracking, RF transmission, power inverters, lidar remote sensing technology and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost-efficiency.