Cree Introduces New GaN MMIC Power AmplifierNovember 27, 2019 by Cree
Cree Introduces New GaN MMIC, Power Amplifier.
Cree’s CMPA601J025D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC enables very wide bandwidths.
- > 30 dB Typical Small Signal Gain
- 35 W Typical PSAT
- Operation up to 22 V
- High Breakdown Voltage
- High Temperature Operation
- Size 0.157 x 0.239 x 0.003 inches
- Jamming Amplifiers
- Test Equipment Amplifiers
- Broadband Amplifiers
- Radar Amplifiers
Cree is an innovator of Wolfspeed® power and radio frequency (RF) semiconductors, lighting-class LEDs and lighting products. Cree’s Wolfspeed product families include silicon carbide materials, power-switching devices and RF devices targeted for applications such as electric vehicles, fast charging, inverters, power supplies, telecom, and military and aerospace. Cree’s LED product families include blue and green LED chips, high-brightness LEDs and lighting-class power LEDs targeted for indoor and outdoor lighting, video displays, transportation, and specialty lighting applications. Cree’s LED lighting systems and lamps serve indoor and outdoor applications.