The monolithic level-shift drivers include integrated bootstrap diodes to save space and reduce overall BOM.
one day ago by Gary Elinoff
This article highlights Infineon the 600 V CoolMOS™ S7 family with two new optimized devices for static switching application.
April 08, 2021 by Hailey Stewart
The new driver delivers gate-driving voltages of up to 26 volts and operates from a high-voltage rail up to 1200V
April 05, 2021 by Gary Elinoff
Efficient Power Conversion’s 200V EPC9150 generates 220 amp, 2.9 ns wide current pulses for automotive LIDAR systems
March 25, 2021 by Gary Elinoff
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
March 22, 2021 by Gary Elinoff
This article highlights UnitedSiC FET-Jet Calculator that is a simple, registration-free online tool that facilitates selection and performance…
March 20, 2021 by Hailey Stewart
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…
March 18, 2021 by Hailey Stewart
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
March 17, 2021 by Gary Elinoff
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…
March 17, 2021 by Hailey Stewart
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
March 15, 2021 by Gary Elinoff
This article highlights ceramic YAG (yttrium aluminum garnet) platform for solid-state lasers and optical components.
March 11, 2021 by Hailey Stewart
This article highlights Wolfspeed’s 650 V SiC MOSFET with the latest third-generation C3M™ SiC MOSFET technology, offering the widest range of…
March 09, 2021 by Hailey Stewart
The EVALSTPM-3PHISO provides galvanic isolation and meets tough international accuracy and quality standards.
March 08, 2021 by Gary Elinoff
To meet a variety of design requirements, the rotary DIP switch models offer multiple termination types, including gull-wing, angled gull wing, and…
March 06, 2021 by Hailey Stewart
The aim of the project is to tackle the EMI that often results from the high switching speeds that are otherwise one of the main benefits of…
March 03, 2021 by Gary Elinoff
The new Merged Pin Schottky 4 to 40 amp, 650 volt devices offer increased efficiency for high frequency applications
March 02, 2021 by Gary Elinoff
The new devices will serve to alleviate some of the “efficiency gap” between P-Channel and N-Channel devices
February 28, 2021 by Gary Elinoff
Navitas describes the new device as the first to integrate logic, drive, protection and power all in GaN and within a single unit.
February 26, 2021 by Gary Elinoff
The new device is meant to strengthen EPC’s ongoing argument that GaN is as easy to use as silicon
February 21, 2021 by Gary Elinoff
The new units feature either four or two channels with 14-bit resolution at up to 0.5 GS/s and 16 digital channels
February 19, 2021 by Gary Elinoff
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