An interview with Dr. Rainer Käsmaier about SiC-based products in the rapidly growing power semiconductor market.
January 14, 2020 by Roland R. Ackerman
At its annual Technologies & Products Press Conference 2019 in Munich, TDK managers Dr. Lucia Cabo and Fernando Rodríguez presented film…
December 18, 2019 by Roland R. Ackerman
Journalists from all over Europe joined ROHM Semiconductor to enjoy the Formula E Race in Monaco this year. An eventful weekend with interesting…
July 12, 2019 by Holger Moscheik
The 30th Annual International Symposium on Power Semiconductor Devices and Integrated Circuits, (ISPSD) was held from May 13-17, 2018 in Chicago,…
July 10, 2018 by Gary Dolny
This article presents the discussions from an interview of Littelfuse on its acquisition of IXYS.
July 06, 2018 by Littelfuse
Bodo´s Power Systems recently interviewed Christian André, Heiko Metzger, Dr. Andreas Bauknecht, and Aly Mashaly, the management of ROHM Europe…
June 08, 2018 by Roland R. Ackerman
This article discusses the Silicon Carbide Technology with Chris Dries from USCi.
June 13, 2017 by Henning Wriedt
The past few years have been notable for the increased rate of investment in developing alternative semiconductor materials such as silicon carbide…
May 12, 2017 by Peter Wawer
Five years ago, in this column, I wrote an editorial entitled, “When Wide Bandgap?” In that piece, I predicted, “The key to success in silicon
October 03, 2016 by Dan Kinzer
Whenever we talk about Silicon Carbide and its applications, our thoughts jump to Silicon Carbide MOSFET power modules, the so called “Full…
April 01, 2016 by Stefan Hauser
This article discusses the best time to switch from 4 to 6-inch wafers for the fabrication of Silicon Carbide (SiC) power semiconductor devices.
January 01, 2016 by Roger Kinnear
Overview ECPE wide bandgap user forums have established as an international event where users - i.e., engineers developing advanced power…
June 01, 2015 by Andreas Lindemann
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