Due to their outstanding characteristics, GaN FETs play an increasingly important role in miniaturization of the switching converters with very…
5 days ago by Pavel Gurev
This article highlights 3-5 Power Electronics Silicon feature dynamic switching characteristics similar to Silicon Carbide (SiC) to give excellent…
July 16, 2021 by Iain Mosely
This article highlights EPC discrete eGaN FETs and Integrated Circuit ePower™ stages.
July 05, 2021 by Marco Palma
Cree announces its partnership with Gospower which focuses on the development of silicon-carbide-based power supply solutions for boosting…
June 26, 2021 by Stephanie Leonida
Efficient Power Conversion’s (EPC) new enhancement-mode gallium nitride (eGaN) FET is primed for space based applications
June 25, 2021 by Gary Elinoff
The German tech giant opened a new $1.2 billion wafer fab to expand its automotive chip production capacity.
June 22, 2021 by Shannon Cuthrell
The new 250-volt device, with an RDS(ON) of 0.21Ω, offers enhanced power circuit reliability for space and military applications.
June 22, 2021 by Gary Elinoff
Hitachi’s High-Tech subsidiary is building a new semiconductor engineering facility in Oregon, expecting growth across EV, autonomous driving,…
June 20, 2021 by Shannon Cuthrell
New York startup lands $498,000 from the Department of Energy to develop silicon carbide semiconductors and modules.
June 16, 2021 by Shannon Cuthrell
This article highlights EPC EPC2065 and EPC2054 eGaN FETs that are higher performing, smaller, more thermally efficient, and at a comparable cost.
June 15, 2021 by Hailey Stewart
Learn about the traits of the rectifying p-n junctions in semiconductors.
June 15, 2021 by Lorenzo Mari
In this “semiconductor basics” series, we’ll learn about the properties of the P-N junction with no external power applied.
June 14, 2021 by Lorenzo Mari
A German semiconductor manufacturer selects Oxford Instruments Plasma Technology’s PlasmaPro 100 ALE solution for creating gallium nitride-based…
June 13, 2021 by Stephanie Leonida
In this article, a discussion is given about testing and related results of Silicon-carbide power MOSFETs for automotive applications. It reports…
June 11, 2021 by Francesco Iannuzzo
The presence and properties of electrons and holes are fundamental to understand how semiconductor devices operate
June 10, 2021 by Lorenzo Mari
Samsung forgoes IPMs for the highest possible price, performance levels that only discrete components can offer.
June 09, 2021 by Gary Elinoff
This article highlights Proton-Electrotex the launch of serially produced single-component diode and thyristor modules B0.
June 09, 2021 by Hailey Stewart
This article highlights Infineon OptiMOS™ power MOSFET packages in the TOLx family, which are theTOLG (TO-Leaded with Gullwing leads)…
June 08, 2021 by Hailey Stewart
The MORNSUN "305RAC (Reliable under All Conditions)" series can be understood that the input voltage range is 85-305VAC.
June 05, 2021 by Hailey Stewart
The Si2 Compact Model Coalition (CMC) has announced it will fund and help institute the standardization of a SPICE model for silicon carbide MOSFETs.
June 04, 2021 by Darshil Patel
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