Latest Semiconductors Articles

CISSOID Augments its Platform of 3-Phase SiC MOSFET IPMs

The expanded portfolio of intelligent power modules (IPM) includes two liquid cooled devices

An Introduction to Light Emitting Diodes

How SiC MOSFETS are Made and How They Work Best

This article highlights Avnet Silica devices featuring STSiC Power components for SiC information.

Infineon Introduces MOSFETS for Static Switching Applications

The new additions to the 600V CooMOS S7 family are aimed at high power, low frequency product designs

II-VI Expands Global SiC Production to Meet Market Demand

II-VI establishes its new backend processing line for conductive SiC substrates in Fuzhou, China.

Researchers Explore Carbon Impurities in Gallium Nitride Semiconductors

Scientists from the Nagoya Institute of Technology (NITech) have conducted innovative research about the role of impurities in Gallium Nitride…

Nexperia Announces New GaN Technology Partnership for EV Development

Dutch semiconductor manufacturer Nexperia teams up with China’s United Automotive Electronic Systems Co. on a new program to develop GaN-based…

Key Foundry Expands to Implement Mass Production of Automotive Semiconductors

This year, Key Foundry’s newly developed Gen3 0.18-micron BCD process and its Gen2 0.13 micron embedded flash process will be used for mass…

Dual Component 700A Thyristor Modules with Minimized Static and Heat Losses

This article highlighs Proton Electrotex dual-component A2-type power thyristor module with a baseplate width of 60 mm rated for a voltage of 1800…

Infineon Introduces a New Series Of Welding Diodes

The new family of housingless power diodes are aimed at medium frequency resistance welding and at other applications requiring high current…

United SiC’s New FET-Jet Tool to Help Engineers Select the Right Device for Their Designs

UnitedSiC brings power systems engineers a new, registration-free tool that can help with quick decision-making when constructing power designs.

Single-point and multi-point Signal Grounding

A grounding arrangement must be designed and implemented adequately for the electronic equipment’s proper performance

Swansea University and Newport Wafer Fab Awarded New Funding for Manufacture of SiC Substrates

Swansea University and Newport Wafer Fab receive government funds to help lead the UK toward net-zero carbon emission goals and clean up technology…

Infineon Introduces 650V High-Side And Low-Side Gate Drivers

The monolithic level-shift drivers include integrated bootstrap diodes to save space and reduce overall BOM.

ROHM and Sanden Huayu Partner to Create Automotive Tech Lab in Shanghai

ROHM Semiconductor establishes a joint automotive tech laboratory with Sanden Huayu Automotive Air-Conditioning Co.

Infineon Expands 600V CoolMOS S7 Family with MOSFETs for Static Switching Applications

This article highlights Infineon the 600 V CoolMOS™ S7 family with two new optimized devices for static switching application.

TDK and Ultra Librarian Partner on Multi-power Module Reference Design L

Ultra Librarian and TDK collaborate to provide design engineers with access to a reference design that can help speed up the design process

STMicroelectronics’ New Isolated Gate Driver is Aimed At SiC MOSFETS

The new driver delivers gate-driving voltages of up to 26 volts and operates from a high-voltage rail up to 1200V