Next Generation Gate Drive Provides a Scalable Solution for Power Stack Designers

Next Generation Gate Drive Provides a Scalable Solution for Power Stack Designers

Amantys Power Electronics Limited has launched support for the Next Generation IGBT Module, a new IGBT module that was a requirement from the European Roll2Rail Project.

The Next Generation IGBT Module Gate Drive (NG Gate Drive) is compatible with IGBT modules known as LinPak, XHP, nHPD2 and SemiTrans20 that are available from several power semiconductor manufacturers. The NG Gate Drive drives up to six of these IGBT modules in parallel. The modular design allows for a scalable solution in line with the requirements for traction applications.

The NG Gate Drive offers Amantys Power Insight, a two way communication protocol between the gate drive and a central controller, allowing configuration of the gate drive in the target power stack to optimise the switching performance. Configurable parameters, include the gate resistors (Rgon, Rgoff and Rgsoftoff), gate-emitter capacitor (Cge), operating mode (two level or three level) and timeouts such as the fault lock out time and dead time. The NG Gate Drive also features multi level desaturation detection for improved protection of the IGBT module. 

The NG Gate Drive records faults that the gate drive has seen during operation. Using the Power Insight Adapter and the Power Insight Configurator these can be downloaded at a later date for analysis. 

The NG Gate Drive is suitable for a wide variety of applications such as traction, wind energy and medium voltage motor drives. The NG Gate Drive is capable of driving IGBT modules from all manufacturers without any changes to the gate drive core functionality. IGBT module variation, such as the position of gate drive connections, is accommodated through use of a module interface card which means the NG Gate Drive can target modules from 1700V to 3300V, and up to 6500V in the future.

More information: Amantys Power Electronics