1.2-mm2 60-V N-channel Power MOSFET with Low On-Resistance

1.2-mm2 60-V N-channel Power MOSFET with Low On-Resistance

Texas Instruments (TI) (NASDAQ: TXN) today introduced a new 60-V N-channel FemtoFET power transistor that provides the industry’s lowest resistance that is 90 percent below traditional 60-V load switches, reducing power loss in end-systems. The CSD18541F5 is offered in a tiny 1.53-mm-by-0.77-mm silicon-based package that has an 80 percent smaller footprint than load switches in SOT-23 packages. 

The CSD18541F5 metal-oxide semiconductor field-effect transistor (MOSFET) maintains a typical on-resistance (Rdson) of 54-m and is designed and optimized to replace standard small-signal MOSFETs in space-constrained industrial load-switch applications. The tiny land grid array (LGA) package features a 0.5-mm pitch between pads for easy mounting. Read the blog post, “Shrink your industrial footprint with new 60V FemtoFET MOSFETs.”

The CSD18541F5 expands TI’s NexFET™ technology portfolio of FemtoFET MOSFETs to include higher voltages and manufacturing-friendly footprints. Download the design summary with more information on the LGA package.

CSD18541F5 key features and benefits:

  • Ultra-low 54-mΩ of Rdson at 10-V gate-to-source (VGS) is 90 percent less than traditional 60-V load switches, providing lower power loss.
  • Ultra-small 1.53-mm-by-0.77-mm-by-0.35-mm LGA package is 80 percent smaller than a traditional load switch in a SOT-23 package, reducing printed circuit board (PCB) board space.
  • Manufacturing-friendly 0.5-mm pad pitch.
  • Integrated electrostatic discharge (ESD) protection diode safeguards the MOSFET gate from over voltage.

Availability, packaging and pricing

Available in volume now from TI and its authorized distributors, the CSD18541F5 is packaged in a 3-pin LGA package and priced at US$0.14 in 1,000-unit quantities.

More information: Texas Instruments