Laminated Busbar Enabling High Frequency, High Voltage, and High Temperature Electronics

Laminated Busbar Enabling High Frequency, High Voltage, and High Temperature Electronics

Mersen, a global expert in electrical specialties and graphite-based materials, has presented its unique solution to get the best of the 2 worlds: high T° (up to 200°C) and low inductance laminated busbar for power module packaging, at PCIM Europe 2016 in May.

SiC and GaN power electronics is now gaining momentum offering a complete range of transistors and diodes with enhanced characteristics compared to incumbent silicon devices:

  • Higher electron mobility
  • Higher junction T° (up to 250°C)
  • Higher switching frequency (several 10’s of kHz)
  • Higher power density

At Mersen, we have increased again our busbar know-how toward carefully selected materials (dielectric and glue), simulation, design rules and related manufacturing process. This enables internal copper busbar compliant with high T° (up to 200°C) and high switching frequency (Stray inductance as low as 35nH in this example).

A complete simulation toolset tailored to your power module

Whatever the power module package type, our multiphysics simulation tools will predict mechanical, thermal and electrical behavior of the whole system.

In the PrimePack™ example, the newly designed laminated busbar simulation has been performed using:

  • Distance between the plates : 0.23 mm
  • Impedance calculating for the complete loop, without influence of the electronic components
  • Material used : copper 1 mm.
  • The impedance Z = R + jX has been solved from 10 Hz to 10 MHz.
  • The loop inductance L is deduced from the imaginary part of the impedance X using L = X / (2πf) 

More information: Mersen